2SB161 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB161
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.125 W
Tensión colector-base (Vcb): 30 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.3 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO5
Búsqueda de reemplazo de 2SB161
2SB161 Datasheet (PDF)
2sb1612.pdf
Transistor2SB1612Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD24741.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga- 45zine packing.0.4 0.080.4 0.040.5
2sb1612 e.pdf
Transistor2SB1612Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD24741.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga- 45zine packing.0.4 0.080.4 0.040.5
Otros transistores... 2SB157 , 2SB1570 , 2SB158 , 2SB1587 , 2SB1588 , 2SB159 , 2SB16 , 2SB160 , BC557 , 2SB162 , 2SB1624 , 2SB1625 , 2SB1626 , 2SB163 , 2SB164 , 2SB1647 , 2SB1648 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
mje15031 | irfp150n | mj15025 | mp1620 | kta1381 | bf494 | 2sc1885 | skd502t