2SB171 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB171
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.125 W
Tensión colector-base (Vcb): 30 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.7 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO1
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2SB171 Datasheet (PDF)
2sb1714.pdf

2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) -370mV, at IC = -1.5A, IB = -75mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XYPNP epitaxial planar silicon tra
2sb1713.pdf

2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XWPNP epitaxial planar silicon transistor
2sb1710.pdf

2SB1710 Transistors General purpose amplification (-30V, -1A) 2SB1710 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.70.4( )3 Features 1) A collector current is large. 2) Collector saturation voltage is low. ( ) ( )1 20.95 0.95VCE(sat) -350mV 0.161.9(1) Base at Ic = -500mA / IB = -25mA (2) E
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2N349A | NKT222 | 2SB736AR | 2SC1297 | 2N3927 | BCW31LT3 | GT2693
History: 2N349A | NKT222 | 2SB736AR | 2SC1297 | 2N3927 | BCW31LT3 | GT2693



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