2SB171 Datasheet and Replacement
Type Designator: 2SB171
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.7 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO1
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2SB171 Datasheet (PDF)
2sb1714.pdf

2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) -370mV, at IC = -1.5A, IB = -75mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XYPNP epitaxial planar silicon tra
2sb1713.pdf

2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XWPNP epitaxial planar silicon transistor
2sb1710.pdf

2SB1710 Transistors General purpose amplification (-30V, -1A) 2SB1710 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.70.4( )3 Features 1) A collector current is large. 2) Collector saturation voltage is low. ( ) ( )1 20.95 0.95VCE(sat) -350mV 0.161.9(1) Base at Ic = -500mA / IB = -25mA (2) E
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SB288 | 2SB1188SQ-R | IMT1A | DTA144WET1G | 3DG3399 | 3DF5 | 2SC3286
Keywords - 2SB171 transistor datasheet
2SB171 cross reference
2SB171 equivalent finder
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History: 2SB288 | 2SB1188SQ-R | IMT1A | DTA144WET1G | 3DG3399 | 3DF5 | 2SC3286



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