2SB173 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB173
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.125 W
   Tensión colector-base (Vcb): 20 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 0.7 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO1

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2SB173 Datasheet (PDF)

..1. Size:73K no
2sb170 2sb171 2sb173 2sb175.pdf

0.1. Size:107K rohm
2sb1733.pdf

2SB1733 Transistors General purpose amplification (-30V, -1A) 2SB1733 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. -350mV at Ic = -500mA / IB = -25mA ROHM :TUMT3 Abbreviated symbol : EW (1) Base(2) Emitter(3) Collector Packaging specification

0.2. Size:105K rohm
2sb1731.pdf

2SB1731 Transistors Low frequency amplifier 2SB1731 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA ROHM : TUMT3 Abbreviated symbol : FL (1)Base(2)Emitter(3)Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Un

0.3. Size:70K rohm
2sb1730.pdf

2SB1730 Transistors General purpose amplification(-12V, -2A) 2SB1730 Applications Dimensions (Unit : mm) Low frequency amplifier Deiver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -180mV at IC= -1A / IB= -50mA ROHM : TUMT3 Abbreviated symbol : FV (1) Base Packaging specifications (2) Emitter(3) CollectorPackag

0.4. Size:105K rohm
2sb1732.pdf

2SB1732 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1732 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -200mV ROHM : TUMT3 Abbreviated symbol : EV (1)Baseat IC = -500mA / IB = -25mA (2)Emitter (3)Collector Packaging specifications

0.5. Size:54K panasonic
2sb1734.pdf

Transistors2SB1734Silicon PNP epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SD27060.40+0.100.050.16+0.100.063 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing.(0.95) (0.95)1.90.1 Absolute Maximum Ratings Ta =

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

Liste

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