Биполярный транзистор 2SB173 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB173
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 85 °C
Граничная частота коэффициента передачи тока (ft): 0.7 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO1
2SB173 Datasheet (PDF)
2sb1733.pdf
2SB1733 Transistors General purpose amplification (-30V, -1A) 2SB1733 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. -350mV at Ic = -500mA / IB = -25mA ROHM :TUMT3 Abbreviated symbol : EW (1) Base(2) Emitter(3) Collector Packaging specification
2sb1731.pdf
2SB1731 Transistors Low frequency amplifier 2SB1731 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA ROHM : TUMT3 Abbreviated symbol : FL (1)Base(2)Emitter(3)Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Un
2sb1730.pdf
2SB1730 Transistors General purpose amplification(-12V, -2A) 2SB1730 Applications Dimensions (Unit : mm) Low frequency amplifier Deiver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -180mV at IC= -1A / IB= -50mA ROHM : TUMT3 Abbreviated symbol : FV (1) Base Packaging specifications (2) Emitter(3) CollectorPackag
2sb1732.pdf
2SB1732 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1732 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -200mV ROHM : TUMT3 Abbreviated symbol : EV (1)Baseat IC = -500mA / IB = -25mA (2)Emitter (3)Collector Packaging specifications
2sb1734.pdf
Transistors2SB1734Silicon PNP epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SD27060.40+0.100.050.16+0.100.063 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing.(0.95) (0.95)1.90.1 Absolute Maximum Ratings Ta =
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050