2SB177 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB177 📄📄
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.125 W
Tensión colector-base (Vcb): 60 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.125 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 0.4 MHz
Ganancia de corriente contínua (hFE): 65
Encapsulados: TO1
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2SB177 datasheet
9.2. Size:107K rohm
2sb1733.pdf 
2SB1733 Transistors General purpose amplification (-30V, -1A) 2SB1733 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) max. -350mV at Ic = -500mA / IB = -25mA ROHM TUMT3 Abbreviated symbol EW (1) Base (2) Emitter (3) Collector Packaging specification
9.3. Size:118K rohm
2sb1714.pdf
2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) -370mV, at IC = -1.5A, IB = -75mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XY PNP epitaxial planar silicon tra
9.4. Size:66K rohm
2sb1707.pdf
2SB1707 Transistors Low frequency amplifier 2SB1707 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. (4A) ( ) ( ) 2) VCE(sat) -250mV 1 2 0.95 0.95 0.16 At IC = -2A / IB = -40mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector
9.5. Size:102K rohm
2sb1709.pdf
2SB1709 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1709 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. 2) Collector saturation voltage is low. (1) (2) 0.95 0.95 VCE(sat) -200mV 0.16 1.9 (1) Base at IC = -500mA / IB = -25mA (2) Emitter Ea
9.6. Size:105K rohm
2sb1731.pdf
2SB1731 Transistors Low frequency amplifier 2SB1731 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA ROHM TUMT3 Abbreviated symbol FL (1)Base (2)Emitter (3)Collector Packaging specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Un
9.7. Size:98K rohm
2sb1713.pdf
2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XW PNP epitaxial planar silicon transistor
9.8. Size:66K rohm
2sb1705.pdf
2SB1705 Transistors Low frequency amplifier 2SB1705 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 (3) Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) -250mV 0.95 0.95 0.16 At IC=-1.5A / IB=-30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Equival
9.9. Size:60K rohm
2sb1706.pdf
2SB1706 Transistors Low frequency amplifier 2SB1706 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) -370mV 0.95 0.95 0.16 At lc= -1.5A / lB= -75mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolu
9.10. Size:1026K rohm
2sb1708.pdf
2SB1708 Datasheet General purpose amplification(-30V,-3A) lOutline l SOT-346T Parameter Value SC-96 VCEO -30V IC -3A TSMT3 lFeatures lInner circuit l l 1) Collector current is large.(3A) 2) VCE(sat) -250mV at IC= -1.5A / IB= -30mA . lApplication l LOW FREQUENCY AMPLIFIER lPackaging specifications l Package Taping Reel si
9.11. Size:70K rohm
2sb1730.pdf
2SB1730 Transistors General purpose amplification(-12V, -2A) 2SB1730 Applications Dimensions (Unit mm) Low frequency amplifier Deiver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -180mV at IC= -1A / IB= -50mA ROHM TUMT3 Abbreviated symbol FV (1) Base Packaging specifications (2) Emitter (3) Collector Packag
9.12. Size:105K rohm
2sb1732.pdf
2SB1732 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1732 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -200mV ROHM TUMT3 Abbreviated symbol EV (1)Base at IC = -500mA / IB = -25mA (2)Emitter (3)Collector Packaging specifications
9.13. Size:104K rohm
2sb1710.pdf
2SB1710 Transistors General purpose amplification (-30V, -1A) 2SB1710 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. 2) Collector saturation voltage is low. ( ) ( ) 1 2 0.95 0.95 VCE(sat) -350mV 0.16 1.9 (1) Base at Ic = -500mA / IB = -25mA (2) E
9.14. Size:54K panasonic
2sb1734.pdf
Transistors 2SB1734 Silicon PNP epitaxial planar type For general amplification Unit mm Complementary to 2SD2706 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing. (0.95) (0.95) 1.9 0.1 Absolute Maximum Ratings Ta =
Otros transistores... 2SB171, 2SB172, 2SB172A, 2SB173, 2SB173B, 2SB174, 2SB175, 2SB176, 2SC2655, 2SB178, 2SB178A, 2SB178B, 2SB178Q, 2SB179, 2SB17A, 2SB18, 2SB180
