RFP2N18L Specs and Replacement
Type Designator: RFP2N18L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 180 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.65 Ohm
Package: TO220AB
RFP2N18L substitution
RFP2N18L datasheet
rfp2n08l rfp2n10l.pdf
RFP2N08L, RFP2N10L Data Sheet July 1999 File Number 2872.2 2A, 80V and 100V, 1.050 Ohm, Logic Level, Features N-Channel Power MOSFETs 2A, 80V and 100V The RFP2N08L and RFP2N10L are N-Channel enhancement rDS(ON) = 1.050 mode silicon gate power field effect transistors specifically Design Optimized for 5V Gate Drives designed for use with logic level (5V) driving sources i... See More ⇒
rfp2n20l.pdf
RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, Features N-Channel Power MOSFET 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate rDS(ON) = 3.500 power field effect transistor is specifically designed for use Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, autom... See More ⇒
Detailed specifications: RFL1N20 , RFL1N20L , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , RFL1P10 , 10N60 , AP9916H , AP9916J , SSM70T03H , SSM70T03J , IRF630MFP , IRFD123 , SIHFD123 , 2SK1202 .
Keywords - RFP2N18L MOSFET specs
RFP2N18L cross reference
RFP2N18L equivalent finder
RFP2N18L pdf lookup
RFP2N18L substitution
RFP2N18L replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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