RFP2N18L PDF and Equivalents Search

 

RFP2N18L Specs and Replacement


   Type Designator: RFP2N18L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 180 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.65 Ohm
   Package: TO220AB
 

 RFP2N18L substitution

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RFP2N18L datasheet

 8.1. Size:87K  njs
rfp2n08 rfp2n10.pdf pdf_icon

RFP2N18L

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 8.2. Size:40K  intersil
rfp2n08l rfp2n10l.pdf pdf_icon

RFP2N18L

RFP2N08L, RFP2N10L Data Sheet July 1999 File Number 2872.2 2A, 80V and 100V, 1.050 Ohm, Logic Level, Features N-Channel Power MOSFETs 2A, 80V and 100V The RFP2N08L and RFP2N10L are N-Channel enhancement rDS(ON) = 1.050 mode silicon gate power field effect transistors specifically Design Optimized for 5V Gate Drives designed for use with logic level (5V) driving sources i... See More ⇒

 9.1. Size:342K  fairchild semi
rfp2n20l.pdf pdf_icon

RFP2N18L

RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, Features N-Channel Power MOSFET 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate rDS(ON) = 3.500 power field effect transistor is specifically designed for use Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, autom... See More ⇒

Detailed specifications: RFL1N20 , RFL1N20L , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , RFL1P10 , 10N60 , AP9916H , AP9916J , SSM70T03H , SSM70T03J , IRF630MFP , IRFD123 , SIHFD123 , 2SK1202 .

Keywords - RFP2N18L MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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