SKM195GB063DN PDF and Equivalents Search

 

SKM195GB063DN Specs and Replacement

Type Designator: SKM195GB063DN

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 830 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 250 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 85 nS

Coesⓘ - Output Capacitance, typ: 1250 pF

Package: MODULE

 SKM195GB063DN Substitution

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SKM195GB063DN datasheet

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SKM195GB063DN

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 4.1. Size:137K  semikron
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SKM195GB063DN

SEMITRANS M Absolute Maximum Ratings Values PT-IGBT Modules Symbol Conditions 1) Units VCES 600 V VCGR RGE = 20 k 600 V SKM 195 GB 062 D IC Tcase = 25/60 C 230 / 195 A SKM 195 GAL 062 D 6) ICM Tcase = 25/60 C; tp = 1 ms 460 / 390 A VGES 20 V Ptot per IGBT, Tcase = 25 C 700 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 2 500 V humidity DIN 40 040 Class F cl... See More ⇒

 4.2. Size:797K  semikron
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SKM195GB063DN

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 6.1. Size:790K  semikron
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Specs: SKM150GB125D, SKM150GB173D, SKM150GB174D, SKM195GAL062D, SKM195GAL063DN, SKM195GAL124DN, SKM195GAR063DN, SKM195GB062D, RJP63K2DPP-M0, SKM195GB124DN, SKM200GA123D, SKM200GAL123D, SKM200GAL173D, SKM200GAR123D, SKM200GAR173D, SKM200GAX173D, SKM200GAY173D

Keywords - SKM195GB063DN transistor spec

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