SKM195GB063DN Datasheet and Replacement
Type Designator: SKM195GB063DN
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 830 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 250 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 85 nS
Coesⓘ - Output Capacitance, typ: 1250 pF
Package: MODULE
- IGBT Cross-Reference
SKM195GB063DN Datasheet (PDF)
skm195gal062d skm195gb062d.pdf
SEMITRANS MAbsolute Maximum RatingsValuesPT-IGBT ModulesSymbol Conditions 1)UnitsVCES 600 VVCGR RGE = 20 k 600 V SKM 195 GB 062 DIC Tcase = 25/60 C 230 / 195 ASKM 195 GAL 062 D 6)ICM Tcase = 25/60 C; tp = 1 ms 460 / 390 AVGES 20 VPtot per IGBT, Tcase = 25 C 700 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2 500 Vhumidity DIN 40 040 Class Fcl
Datasheet: SKM150GB125D , SKM150GB173D , SKM150GB174D , SKM195GAL062D , SKM195GAL063DN , SKM195GAL124DN , SKM195GAR063DN , SKM195GB062D , RJP63K2DPP-M0 , SKM195GB124DN , SKM200GA123D , SKM200GAL123D , SKM200GAL173D , SKM200GAR123D , SKM200GAR173D , SKM200GAX173D , SKM200GAY173D .
History: AOTF15B65MQ1
Keywords - SKM195GB063DN transistor datasheet
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History: AOTF15B65MQ1
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