SKM200GB124D IGBT. Datasheet pdf. Equivalent
Type Designator: SKM200GB124D
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1380 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 290 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 1600 pF
Package: MODULE
SKM200GB124D Transistor Equivalent Substitute - IGBT Cross-Reference Search
SKM200GB124D Datasheet (PDF)
skm200gb12e4.pdf
SKM200GB12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12E4Tc =80C 172 A
skm200gb12t4.pdf
SKM200GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12T4Tc =80C
skm200gb12v.pdf
SKM200GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 311 ATj = 175 CTc =80C 237 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 3tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12VTc =80C 172 AIFnom
Datasheet: SKM200GAL123D , SKM200GAL173D , SKM200GAR123D , SKM200GAR173D , SKM200GAX173D , SKM200GAY173D , SKM200GB063D , SKM200GB123D , FGH60N60SMD , SKM200GB173D , SKM200GB174D , SKM200GBD123D1S , FGH50N6S2D , SKM22GD123D , SKM300GA123D , SKM300GA173D , SKM300GAL063D .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2