All IGBT. SKM300GA173D Datasheet

 

SKM300GA173D Datasheet and Replacement


   Type Designator: SKM300GA173D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1750 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 300 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 90 nS
   Coesⓘ - Output Capacitance, typ: 2500 pF
   Package: MODULE
 

 SKM300GA173D substitution

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SKM300GA173D Datasheet (PDF)

 ..1. Size:1308K  semikron
 skm300ga173d.pdf pdf_icon

SKM300GA173D

SEMITRANS MAbsolute Maximum Ratings ValuesIGBT ModulesSymbol Conditions 1) UnitsV 1700 VCESSKM 300 GA 173 DV R = 20 k 1700 VCGR GEI T = 25/80 C 300 / 200 AC caseI T = 25/80 C; t = 1 ms 600 / 400 ACM case pV 20 VGESP per IGBT, Tcase = 25 C 1750 WtotTj, (Tstg) 40 . . .+150 (125) CVisol AC, 1 min. 4000 Vhumidity DIN 40 040 Class Fclimate

 5.1. Size:418K  semikron
 skm300ga12v.pdf pdf_icon

SKM300GA173D

SKM300GA12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 420 ATj = 175 CTc =80C 319 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 4tpsc VGE 15 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GA12VTc =80C 264 AIFnom

 5.2. Size:625K  semikron
 skm300ga12e4.pdf pdf_icon

SKM300GA173D

SKM300GA12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 422 ATj = 175 CTc =80C 324 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 4tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GA12E4Tc =80

 5.3. Size:624K  semikron
 skm300ga12t4.pdf pdf_icon

SKM300GA173D

SKM300GA12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 422 ATj = 175 CTc =80C 324 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 4tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GA12T4T

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Datasheet: SKM200GB123D , SKM200GB124D , SKM200GB173D , SKM200GB174D , SKM200GBD123D1S , FGH50N6S2D , SKM22GD123D , SKM300GA123D , BT40T60ANF , SKM300GAL063D , SKM300GAL123D , SKM300GAR063D , SKM300GAR123D , SKM300GAX123D , SKM300GAY123D , SKM300GB063D , SKM300GB123D .

History: APTGT75X120TE3 | SKM195GAR063DN

Keywords - SKM300GA173D transistor datasheet

 SKM300GA173D cross reference
 SKM300GA173D equivalent finder
 SKM300GA173D lookup
 SKM300GA173D substitution
 SKM300GA173D replacement

 

 
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