SKM300GA173D - аналоги, параметры транзистора

SKM300GA173D даташит

..1. Size:1308K semikron
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SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) Units V 1700 V CES SKM 300 GA 173 D V R = 20 k 1700 V CGR GE I T = 25/80 C 300 / 200 A C case I T = 25/80 C; t = 1 ms 600 / 400 A CM case p V 20 V GES P per IGBT, Tcase = 25 C 1750 W tot Tj, (Tstg) 40 . . .+150 (125) C Visol AC, 1 min. 4000 V humidity DIN 40 040 Class F climate

5.1. Size:418K semikron
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SKM300GA12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 420 A Tj = 175 C Tc =80 C 319 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 4 tpsc VGE 15 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GA12V Tc =80 C 264 A IFnom

5.2. Size:625K semikron
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SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GA12E4 Tc =80

5.3. Size:624K semikron
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SKM300GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GA12T4 T