SKM300GAL123D Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SKM300GAL123D Specs and Replacement

Type Designator: SKM300GAL123D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1660 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 300 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 90 nS

Coesⓘ - Output Capacitance, typ: 2500 pF

Package: MODULE

SKM300GAL123D Substitution

- IGBTⓘ Cross-Reference Search

SKM300GAL123D datasheet

..1. Size:653K semikron
skm300gal123d.pdf pdf_icon

... See More ⇒

3.1. Size:414K semikron
skm300gal12t4.pdf pdf_icon

SKM300GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GAL12T4 Tc =80 ... See More ⇒

3.2. Size:413K semikron
skm300gal12e4.pdf pdf_icon

SKM300GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GAL12E4 Tc =80 C 264... See More ⇒

5.1. Size:660K semikron
skm300gal063d.pdf pdf_icon