SKM300GAY123D Specs and Replacement
Type Designator: SKM300GAY123D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1660 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 300 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 90 nS
Coesⓘ - Output Capacitance, typ: 2500 pF
Package: MODULE SKM300GAY123D Substitution - IGBTⓘ Cross-Reference Search
SKM300GAY123D datasheet
skm300gax123d skm300gay123d.pdf
SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) Units VCES 1200 V VCGR RGE = 20 k 1200 V SKM 300 GAX 123 D 6) IC Tcase = 25/80 C 300 / 220 A SKM 300 GAY 123 D 6) ICM Tcase = 25/80 C; tp = 1 ms 600 / 440 A VGES 20 V Ptot per IGBT, Tcase = 25 C 1660 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 2500 V humidity DIN 40 040 Class F ... See More ⇒
skm300ga12v.pdf
SKM300GA12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 420 A Tj = 175 C Tc =80 C 319 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 4 tpsc VGE 15 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GA12V Tc =80 C 264 A IFnom ... See More ⇒
skm300gar12e4.pdf
SKM300GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GAR12E4 Tc =... See More ⇒
skm300ga12e4.pdf
SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GA12E4 Tc =80... See More ⇒
Specs: SKM22GD123D, SKM300GA123D, SKM300GA173D, SKM300GAL063D, SKM300GAL123D, SKM300GAR063D, SKM300GAR123D, SKM300GAX123D, RJP63F3DPP-M0, SKM300GB063D, SKM300GB123D, SKM300GB124D, SKM300GB174D, SKM400GA062D, SKM400GA123D, SKM400GA124D, SKM400GA173D
Keywords - SKM300GAY123D transistor spec
SKM300GAY123D cross reference
SKM300GAY123D equivalent finder
SKM300GAY123D lookup
SKM300GAY123D substitution
SKM300GAY123D replacement
History: SMBH1G75US60
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