SKM300GAY123D - аналоги и описание IGBT

SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) Units VCES 1200 V VCGR RGE = 20 k 1200 V SKM 300 GAX 123 D 6) IC Tcase = 25/80 C 300 / 220 A SKM 300 GAY 123 D 6) ICM Tcase = 25/80 C; tp = 1 ms 600 / 440 A VGES 20 V Ptot per IGBT, Tcase = 25 C 1660 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 2500 V humidity DIN 40 040 Class F

SKM300GA12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 420 A Tj = 175 C Tc =80 C 319 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 4 tpsc VGE 15 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GA12V Tc =80 C 264 A IFnom

SKM300GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GAR12E4 Tc =

SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GA12E4 Tc =80

SKM300GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GAL12T4 Tc =80

SKM 300GB063D Absolute Maximum Ratings Symbol Conditions Values Units IGBT SEMITRANS 3 Inverse Diode Superfast IGBT Modules SKM 300GB063D

SKM300GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GA12T4 T

SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) Units V 1700 V CES SKM 300 GA 173 D V R = 20 k 1700 V CGR GE I T = 25/80 C 300 / 200 A C case I T = 25/80 C; t = 1 ms 600 / 400 A CM case p V 20 V GES P per IGBT, Tcase = 25 C 1750 W tot Tj, (Tstg) 40 . . .+150 (125) C Visol AC, 1 min. 4000 V humidity DIN 40 040 Class F climate

SKM300GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GAL12E4 Tc =80 C 264