SKM300GB063D Specs and Replacement
Type Designator: SKM300GB063D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 1350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 400 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 2000 pF
Package: MODULE SKM300GB063D Substitution
- IGBT ⓘ Cross-Reference Search
SKM300GB063D datasheet
6.4. Size:436K semikron
skm300gb12v.pdf 
SKM300GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 420 A Tj = 175 C Tc =80 C 319 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 3 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GB12V Tc =80 C 264 A IFnom ... See More ⇒
6.5. Size:376K semikron
skm300gb12e4.pdf
SKM300GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GB12E4 Tc =80 C 264 A... See More ⇒
6.6. Size:401K semikron
skm300gb12t4.pdf
SKM300GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GB12T4 Tc =80 C ... See More ⇒
6.8. Size:499K semikron
skm300gbd12t4.pdf
SKM300GBD12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 56 A Tj = 175 C SKM300GBD12T4 ... See More ⇒
Specs: SKM300GA123D, SKM300GA173D, SKM300GAL063D, SKM300GAL123D, SKM300GAR063D, SKM300GAR123D, SKM300GAX123D, SKM300GAY123D, FGH60N60SFD, SKM300GB123D, SKM300GB124D, SKM300GB174D, SKM400GA062D, SKM400GA123D, SKM400GA124D, SKM400GA173D, SKM400GA174D
Keywords - SKM300GB063D transistor spec
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