SKM300GB123D PDF and Equivalents Search

 

SKM300GB123D Specs and Replacement

Type Designator: SKM300GB123D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1660 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 300 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 90 nS

Coesⓘ - Output Capacitance, typ: 2500 pF

Package: MODULE

 SKM300GB123D Substitution

- IGBTⓘ Cross-Reference Search

 

SKM300GB123D datasheet

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SKM300GB123D

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SKM300GB123D

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SKM300GB123D

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 4.3. Size:436K  semikron
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SKM300GB123D

SKM300GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 420 A Tj = 175 C Tc =80 C 319 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 3 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GB12V Tc =80 C 264 A IFnom ... See More ⇒

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Specs: SKM300GA173D, SKM300GAL063D, SKM300GAL123D, SKM300GAR063D, SKM300GAR123D, SKM300GAX123D, SKM300GAY123D, SKM300GB063D, SGT60N60FD1P7, SKM300GB124D, SKM300GB174D, SKM400GA062D, SKM400GA123D, SKM400GA124D, SKM400GA173D, SKM400GA174D, SKM400GAL062D

Keywords - SKM300GB123D transistor spec

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