IGC168T170S8RM IGBT. Datasheet pdf. Equivalent

IGC168T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RM 1700V 150A 13.38 x 12.58 mm2 sawn on foil Mechanical Parameters

IGC168T170S8RH IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses and saturation losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2 sawn on foil

SIGC16T120CS IGBT Chip in NPT-technology CFEATURES: 1200V NPT technology This chip is used for: 180m chip SGP07N120 short circuit prove positive temperature coefficient Applications: G easy paralleling drives, SMPS, resonant E applications Chip Type VCE ICn Die Size Package Ordering Code SIGC16T120CS 1200V 8A 4.04 x 4 mm2 sawn on foil Q67

SIGC16T120CIGBT Chip in NPT-technologyFeatures: This chip is used for: 1200V NPT technology power module CBUP 311D /BUP 212 short circuit prove positive temperature coefficientApplications: easy paralleling drivesGEChip Type VCE IC Die Size PackageSIGC16T120C 1200V 8A 4.04 x 4 mm2 sawn on foilMechanical ParameterRaster size 4.04 x 4Emitter pad

SIGC16T120CL IGBT Chip in NPT-technology CFEATURES: This chip is used for: 1200V NPT technology 180m chip chip only short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4703-SIGC16T120CL 1200V 8A 4.04 x 4 mm2 sawn on foil A003 MECHANI