Справочник IGBT. IGC168T170S8RM

 

IGC168T170S8RM - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IGC168T170S8RM

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1700

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.2

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 150

Максимальная температура перехода (Tj): 150

Корпус: CHIP

Аналог (замена) для IGC168T170S8RM

 

 

IGC168T170S8RM Datasheet (PDF)

1.1. igc168t170s8rm.pdf Size:217K _igbt_a

IGC168T170S8RM
IGC168T170S8RM

 IGC168T170S8RM IGBT3 Power Chip Features: This chip is used for:  1700V Trench + Field stop technology  power modules C  low switching losses  soft turn off Applications:  positive temperature coefficient  drives  easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RM 1700V 150A 13.38 x 12.58 mm2 sawn on foil Mechanical Parameters

1.2. igc168t170s8rh.pdf Size:217K _igbt_a

IGC168T170S8RM
IGC168T170S8RM

 IGC168T170S8RH IGBT3 Power Chip Features: This chip is used for:  1700V Trench + Field stop technology  power modules C  low switching losses and saturation losses  soft turn off Applications:  positive temperature coefficient  drives  easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2 sawn on foil

 5.1. sigc16t120c.pdf Size:60K _igbt

IGC168T170S8RM
IGC168T170S8RM

SIGC16T120C IGBT Chip in NPT-technology Features: This chip is used for:  1200V NPT technology  power module C BUP 311D /BUP 212  short circuit prove  positive temperature coefficient Applications:  easy paralleling  drives G E Chip Type VCE IC Die Size Package SIGC16T120C 1200V 8A 4.04 x 4 mm2 sawn on foil Mechanical Parameter Raster size 4.04 x 4 Emitter pad

5.2. sigc16t120cl.pdf Size:60K _igbt

IGC168T170S8RM
IGC168T170S8RM

SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: This chip is used for: • 1200V NPT technology • 180µm chip • chip only • short circuit prove • positive temperature coefficient Applications: G • easy paralleling E • drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4703- SIGC16T120CL 1200V 8A 4.04 x 4 mm2 sawn on foil A003 MECHANI

 5.3. sigc16t120cs.pdf Size:61K _igbt

IGC168T170S8RM
IGC168T170S8RM

SIGC16T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology This chip is used for: • 180µm chip • SGP07N120 • short circuit prove • positive temperature coefficient Applications: G • easy paralleling • drives, SMPS, resonant E applications Chip Type VCE ICn Die Size Package Ordering Code SIGC16T120CS 1200V 8A 4.04 x 4 mm2 sawn on foil Q67

Другие IGBT... IGC10R60DE , IGC10T65QE , IGC114T170S8RH , IGC114T170S8RM , IGC11T120T6L , APT33GF120LRD , IGC189T120T8RL , IGC189T120T6RL , G40N60B3 , APT50GF120HR , IGC168T170S8RH , APT50GF120LR , APT50GF60AR , IGC142T120T8RL , IGC142T120T8RM , IGC15T65QE , APT50GF60LRD .

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Список транзисторов

Обновления

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |