IGC168T170S8RM - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IGC168T170S8RM
Тип транзистора: IGBT
Тип управляющего канала: N
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1700 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 150 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
Tjⓘ - Максимальная температура перехода: 175 ℃
Тип корпуса: CHIP
Аналог (замена) для IGC168T170S8RM
IGC168T170S8RM Datasheet (PDF)
igc168t170s8rm.pdf
IGC168T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RM 1700V 150A 13.38 x 12.58 mm2 sawn on foil Mechanical Parameters
igc168t170s8rh.pdf
IGC168T170S8RH IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses and saturation losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2 sawn on foil
sigc16t120cs.pdf
SIGC16T120CS IGBT Chip in NPT-technology CFEATURES: 1200V NPT technology This chip is used for: 180m chip SGP07N120 short circuit prove positive temperature coefficient Applications: G easy paralleling drives, SMPS, resonant E applications Chip Type VCE ICn Die Size Package Ordering Code SIGC16T120CS 1200V 8A 4.04 x 4 mm2 sawn on foil Q67
sigc16t120c.pdf
SIGC16T120CIGBT Chip in NPT-technologyFeatures: This chip is used for: 1200V NPT technology power module CBUP 311D /BUP 212 short circuit prove positive temperature coefficientApplications: easy paralleling drivesGEChip Type VCE IC Die Size PackageSIGC16T120C 1200V 8A 4.04 x 4 mm2 sawn on foilMechanical ParameterRaster size 4.04 x 4Emitter pad
sigc16t120cl.pdf
SIGC16T120CL IGBT Chip in NPT-technology CFEATURES: This chip is used for: 1200V NPT technology 180m chip chip only short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4703-SIGC16T120CL 1200V 8A 4.04 x 4 mm2 sawn on foil A003 MECHANI
Другие IGBT... IGC10R60DE , IGC10T65QE , IGC114T170S8RH , IGC114T170S8RM , IGC11T120T6L , APT33GF120LRD , IGC189T120T8RL , IGC189T120T6RL , FGH40N60UFD , APT50GF120HR , IGC168T170S8RH , APT50GF120LR , APT50GF60AR , IGC142T120T8RL , IGC142T120T8RM , IGC15T65QE , APT50GF60LRD .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2