SKM400GA173D Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SKM400GA173D Specs and Replacement

Type Designator: SKM400GA173D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 2500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 440 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 120 nS

Coesⓘ - Output Capacitance, typ: 3500 pF

Package: MODULE

SKM400GA173D Substitution

- IGBTⓘ Cross-Reference Search

SKM400GA173D datasheet

..1. Size:548K semikron
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4.1. Size:107K semikron
skm400ga174d.pdf pdf_icon

SEMITRANS M Absolute Maximum Ratings Values Low Loss IGBT Modules Symbol Conditions 1) Units VCES 1700 V VCGR RGE = 20 k 1700 V SKM 400 GA 174 D IC; ICN Tcase = 25/75 C 540 / 400 A ICM Tcase = 25/75 C; tp = 1 ms 1080 / 800 A VGES 20 V Preliminary Data Ptot per IGBT, Tcase = 25 C 2780 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 4) 3400 V humidity DIN 40 04... See More ⇒

5.1. Size:539K semikron
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5.2. Size:627K semikron
skm400ga12e4.pdf pdf_icon

SKM400GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 616 A Tj = 175 C Tc =80 C 474 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 440 A Tj = 175 C SKM400GA12E4 Tc =8... See More ⇒