All IGBT. SKM400GAR062D Datasheet

 

SKM400GAR062D IGBT. Datasheet pdf. Equivalent


   Type Designator: SKM400GAR062D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 475 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 120 nS
   Coesⓘ - Output Capacitance, typ: 2500 pF
   Package: MODULE

 SKM400GAR062D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SKM400GAR062D Datasheet (PDF)

 ..1. Size:138K  semikron
skm400ga062d skm400gal062d skm400gar062d skm400gb062d.pdf

SKM400GAR062D
SKM400GAR062D

SEMITRANS MAbsolute Maximum RatingsValuesPT-IGBT ModulesSymbol Conditions 1)UnitsVCES 600 VVCGR RGE = 20 k 600 V SKM 400 GA 062 D *)IC Tcase = 25/60 C 475 / 400 ASKM 400 GB 062 DICM Tcase = 25/60 C; tp = 1 ms 950 / 800 ASKM 400 GAL 062 D 6)VGES 20 VSKM 400 GAR 062 D 6)Ptot per IGBT, Tcase = 25 C 1400 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 m

 5.1. Size:743K  semikron
skm400gal124d skm400gar124d skm400gb124d.pdf

SKM400GAR062D
SKM400GAR062D

 5.2. Size:414K  semikron
skm400gar12e4.pdf

SKM400GAR062D
SKM400GAR062D

SKM400GAR12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 618 ATj = 175 CTc =80C 475 AICnom 400 AICRM ICRM = 3xICnom 1200 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 440 ATj = 175 CSKM400GAR12E4Tc =80C 32

 5.3. Size:477K  semikron
skm400gar12v.pdf

SKM400GAR062D
SKM400GAR062D

SKM400GAR12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 612 ATj = 175 CTc =80C 467 AICnom 400 AICRM ICRM = 3xICnom 1200 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 3tpsc VGE 15 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 440 ATj = 175 CSKM400GAR12VTc =80C 329 AIFn

 5.4. Size:415K  semikron
skm400gar12t4.pdf

SKM400GAR062D
SKM400GAR062D

SKM400GAR12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 618 ATj = 175 CTc =80C 475 AICnom 400 AICRM ICRM = 3xICnom 1200 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 440 ATj = 175 CSKM400GAR12T4Tc =80

Datasheet: SKM300GB174D , SKM400GA062D , SKM400GA123D , SKM400GA124D , SKM400GA173D , SKM400GA174D , SKM400GAL062D , SKM400GAL124D , GT30F126 , SKM400GAR124D , SKM400GB062D , SKM400GB123D , SKM400GB124D , SKM40GD123D , SKM40GD124D , SKM40GDL123D , SKM500GA123D .

 

 
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