SKM400GAR062D - аналоги, параметры транзистора

SKM400GAR062D даташит

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SEMITRANS M Absolute Maximum Ratings Values PT-IGBT Modules Symbol Conditions 1) Units VCES 600 V VCGR RGE = 20 k 600 V SKM 400 GA 062 D *) IC Tcase = 25/60 C 475 / 400 A SKM 400 GB 062 D ICM Tcase = 25/60 C; tp = 1 ms 950 / 800 A SKM 400 GAL 062 D 6) VGES 20 V SKM 400 GAR 062 D 6) Ptot per IGBT, Tcase = 25 C 1400 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 m

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5.2. Size:414K semikron
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SKM400GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 618 A Tj = 175 C Tc =80 C 475 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 440 A Tj = 175 C SKM400GAR12E4 Tc =80 C 32

5.3. Size:477K semikron
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SKM400GAR12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 612 A Tj = 175 C Tc =80 C 467 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 3 tpsc VGE 15 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 440 A Tj = 175 C SKM400GAR12V Tc =80 C 329 A IFn