SKM400GB123D Specs and Replacement
Type Designator: SKM400GB123D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 2500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 400 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 115 nS
Coesⓘ - Output Capacitance, typ: 3300 pF
Package: MODULE SKM400GB123D Substitution - IGBT ⓘ Cross-Reference Search
SKM400GB123D datasheet
skm400gb12t4.pdf
SKM400GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 618 A Tj = 175 C Tc =80 C 475 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 440 A Tj = 175 C SKM400GB12T4 Tc =80 C... See More ⇒
Specs: SKM400GA124D, SKM400GA173D, SKM400GA174D, SKM400GAL062D, SKM400GAL124D, SKM400GAR062D, SKM400GAR124D, SKM400GB062D, YGW60N65F1A1, SKM400GB124D, SKM40GD123D, SKM40GD124D, SKM40GDL123D, SKM500GA123D, SKM500GA123S, SKM500GA124D, SKM500GA174D
Keywords - SKM400GB123D transistor spec
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History: SM2G75US120
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