SKM400GB123D Datasheet and Replacement
Type Designator: SKM400GB123D
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 2500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 115 nS
Coesⓘ - Output Capacitance, typ: 3300 pF
Qgⓘ - Total Gate Charge, typ: 3000 nC
Package: MODULE
- IGBT Cross-Reference
SKM400GB123D Datasheet (PDF)
skm400gb12t4.pdf
SKM400GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 618 ATj = 175 CTc =80C 475 AICnom 400 AICRM ICRM = 3xICnom 1200 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 440 ATj = 175 CSKM400GB12T4Tc =80C
Datasheet: SKM400GA124D , SKM400GA173D , SKM400GA174D , SKM400GAL062D , SKM400GAL124D , SKM400GAR062D , SKM400GAR124D , SKM400GB062D , RJH3047 , SKM400GB124D , SKM40GD123D , SKM40GD124D , SKM40GDL123D , SKM500GA123D , SKM500GA123S , SKM500GA124D , SKM500GA174D .
Keywords - SKM400GB123D transistor datasheet
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