IGC168T170S8RH PDF and Equivalents Search

 

IGC168T170S8RH Specs and Replacement

Type Designator: IGC168T170S8RH

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

Package: CHIP

 IGC168T170S8RH Substitution

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IGC168T170S8RH datasheet

 ..1. Size:217K  infineon
igc168t170s8rh.pdf pdf_icon

IGC168T170S8RH

IGC168T170S8RH IGBT3 Power Chip Features This chip is used for 1700V Trench + Field stop technology power modules C low switching losses and saturation losses soft turn off Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2 sawn on foil ... See More ⇒

 1.1. Size:217K  infineon
igc168t170s8rm.pdf pdf_icon

IGC168T170S8RH

IGC168T170S8RM IGBT3 Power Chip Features This chip is used for 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RM 1700V 150A 13.38 x 12.58 mm2 sawn on foil Mechanical Parameters ... See More ⇒

 9.1. Size:61K  infineon
sigc16t120cs.pdf pdf_icon

IGC168T170S8RH

SIGC16T120CS IGBT Chip in NPT-technology C FEATURES 1200V NPT technology This chip is used for 180 m chip SGP07N120 short circuit prove positive temperature coefficient Applications G easy paralleling drives, SMPS, resonant E applications Chip Type VCE ICn Die Size Package Ordering Code SIGC16T120CS 1200V 8A 4.04 x 4 mm2 sawn on foil Q67... See More ⇒

 9.2. Size:60K  infineon
sigc16t120c.pdf pdf_icon

IGC168T170S8RH

SIGC16T120C IGBT Chip in NPT-technology Features This chip is used for 1200V NPT technology power module C BUP 311D /BUP 212 short circuit prove positive temperature coefficient Applications easy paralleling drives G E Chip Type VCE IC Die Size Package SIGC16T120C 1200V 8A 4.04 x 4 mm2 sawn on foil Mechanical Parameter Raster size 4.04 x 4 Emitter pad ... See More ⇒

Specs: IGC114T170S8RH, IGC114T170S8RM, IGC11T120T6L, APT33GF120LRD, IGC189T120T8RL, IGC189T120T6RL, IGC168T170S8RM, APT50GF120HR, GT30J124, APT50GF120LR, APT50GF60AR, IGC142T120T8RL, IGC142T120T8RM, IGC15T65QE, APT50GF60LRD, IGC142T120T6RH, IGC142T120T6RL

Keywords - IGC168T170S8RH transistor spec

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