IGC168T170S8RH - аналоги и описание IGBT

IGC168T170S8RH IGBT3 Power Chip Features This chip is used for 1700V Trench + Field stop technology power modules C low switching losses and saturation losses soft turn off Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2 sawn on foil

IGC168T170S8RM IGBT3 Power Chip Features This chip is used for 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RM 1700V 150A 13.38 x 12.58 mm2 sawn on foil Mechanical Parameters

SIGC16T120CS IGBT Chip in NPT-technology C FEATURES 1200V NPT technology This chip is used for 180 m chip SGP07N120 short circuit prove positive temperature coefficient Applications G easy paralleling drives, SMPS, resonant E applications Chip Type VCE ICn Die Size Package Ordering Code SIGC16T120CS 1200V 8A 4.04 x 4 mm2 sawn on foil Q67

SIGC16T120C IGBT Chip in NPT-technology Features This chip is used for 1200V NPT technology power module C BUP 311D /BUP 212 short circuit prove positive temperature coefficient Applications easy paralleling drives G E Chip Type VCE IC Die Size Package SIGC16T120C 1200V 8A 4.04 x 4 mm2 sawn on foil Mechanical Parameter Raster size 4.04 x 4 Emitter pad

SIGC16T120CL IGBT Chip in NPT-technology C FEATURES This chip is used for 1200V NPT technology 180 m chip chip only short circuit prove positive temperature coefficient Applications G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4703- SIGC16T120CL 1200V 8A 4.04 x 4 mm2 sawn on foil A003 MECHANI