SKM75GB124D Datasheet and Replacement
Type Designator: SKM75GB124D
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 460 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 500 pF
Package: MODULE
- IGBT Cross-Reference
SKM75GB124D Datasheet (PDF)
skm75gb12t4.pdf

SKM75GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 115 ATj = 175 CTc =80C 88 AICnom 75 AICRM ICRM = 3xICnom 225 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 97 ATj = 175 CSKM75GB12T4Tc =80C 73 A
skm75gb12v.pdf

SKM75GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 114 ATj = 175 CTc =80C 87 AICnom 75 AICRM ICRM = 3xICnom 225 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 97 ATj = 175 CSKM75GB12VTc =80C 73 AIFnom 75 A
Datasheet: SKM50GD063DL , SKM50GDL063DL , SKM50GH063DL , SKM75GAL063D , SKM75GAL123D , BRG60N65D , SKM75GB063D , SKM75GB123D , IRGP4066D , SKM75GB173D , SKM75GD123D , SKM75GD124D , SKM75GDL123D , SM2G100US120 , SM2G100US60 , SM2G150US120 , SM2G150US60 .
History: BSM25GD120DN2_E3224 | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | STGD6NC60H-1 | APT50GS60SRDQ2G | CRG05T60A44S-G
Keywords - SKM75GB124D transistor datasheet
SKM75GB124D cross reference
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History: BSM25GD120DN2_E3224 | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | STGD6NC60H-1 | APT50GS60SRDQ2G | CRG05T60A44S-G



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