SKM75GB173D Specs and Replacement
Type Designator: SKM75GB173D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
tr ⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 640 pF
Package: MODULE SKM75GB173D Substitution - IGBT ⓘ Cross-Reference Search
SKM75GB173D datasheet
skm75gb12t4.pdf
SKM75GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 115 A Tj = 175 C Tc =80 C 88 A ICnom 75 A ICRM ICRM = 3xICnom 225 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 97 A Tj = 175 C SKM75GB12T4 Tc =80 C 73 A ... See More ⇒
skm75gb12v.pdf
SKM75GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 114 A Tj = 175 C Tc =80 C 87 A ICnom 75 A ICRM ICRM = 3xICnom 225 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 97 A Tj = 175 C SKM75GB12V Tc =80 C 73 A IFnom 75 A ... See More ⇒
Specs: SKM50GDL063DL, SKM50GH063DL, SKM75GAL063D, SKM75GAL123D, BRG60N65D, SKM75GB063D, SKM75GB123D, SKM75GB124D, GT30F133, SKM75GD123D, SKM75GD124D, SKM75GDL123D, SM2G100US120, SM2G100US60, SM2G150US120, SM2G150US60, SM2G200US120
Keywords - SKM75GB173D transistor spec
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