All IGBT. SKM75GD123D Datasheet

 

SKM75GD123D Datasheet and Replacement


   Type Designator: SKM75GD123D
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 390 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 56 nS
   Coesⓘ - Output Capacitance, typ: 500 pF
   Package: MODULE
 

 SKM75GD123D substitution

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SKM75GD123D Datasheet (PDF)

 ..1. Size:684K  semikron
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SKM75GD123D

 5.1. Size:139K  semikron
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SKM75GD123D

SEMITRANS MAbsolute Maximum RatingsValuesLow Loss IGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 75 GD 124 DIC Tcase = 25/60 C 90 / 75 AICM Tcase = 25/60 C; tp = 1 ms 180 / 150 AVGES 20 VPtot per IGBT, Tcase = 25 C 390 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 Vhumidity DIN 40 040 Class Fclimate DIN IEC 68 T

 7.1. Size:684K  semikron
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SKM75GD123D

 8.1. Size:786K  semikron
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SKM75GD123D

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Datasheet: SKM50GH063DL , SKM75GAL063D , SKM75GAL123D , BRG60N65D , SKM75GB063D , SKM75GB123D , SKM75GB124D , SKM75GB173D , RJH60F5DPQ-A0 , SKM75GD124D , SKM75GDL123D , SM2G100US120 , SM2G100US60 , SM2G150US120 , SM2G150US60 , SM2G200US120 , SM2G200US60 .

History: APT15GP60KG | IXEH40N120D1

Keywords - SKM75GD123D transistor datasheet

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