SKM75GD123D Specs and Replacement
Type Designator: SKM75GD123D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 390 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 56 nS
Coesⓘ - Output Capacitance, typ: 500 pF
Package: MODULE SKM75GD123D Substitution - IGBT ⓘ Cross-Reference Search
SKM75GD123D datasheet
skm75gd124d.pdf
SEMITRANS M Absolute Maximum Ratings Values Low Loss IGBT Modules Symbol Conditions 1) Units VCES 1200 V VCGR RGE = 20 k 1200 V SKM 75 GD 124 D IC Tcase = 25/60 C 90 / 75 A ICM Tcase = 25/60 C; tp = 1 ms 180 / 150 A VGES 20 V Ptot per IGBT, Tcase = 25 C 390 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 2500 V humidity DIN 40 040 Class F climate DIN IEC 68 T... See More ⇒
Specs: SKM50GH063DL, SKM75GAL063D, SKM75GAL123D, BRG60N65D, SKM75GB063D, SKM75GB123D, SKM75GB124D, SKM75GB173D, TGAN60N60F2DS, SKM75GD124D, SKM75GDL123D, SM2G100US120, SM2G100US60, SM2G150US120, SM2G150US60, SM2G200US120, SM2G200US60
Keywords - SKM75GD123D transistor spec
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