SMBH1G100US60 Specs and Replacement
Type Designator: SMBH1G100US60
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: 7PM-AA SMBH1G100US60 Substitution - IGBT ⓘ Cross-Reference Search
SMBH1G100US60 datasheet
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Specs: SM2G200US60, SM2G300US60, SM2G400US60, SM2G50US120, SM2G50US60, SM2G75US120, SM2G75US60, SMBH1G100US120, FGL60N100BNTD, SMBH1G150US120, SMBH1G150US60, SMBH1G200US120, SMBH1G200US60, SMBH1G300US60, SMBH1G400US60, SMBH1G50US120, SMBH1G50US60
Keywords - SMBH1G100US60 transistor spec
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