SMBH1G200US120 Specs and Replacement
Type Designator: SMBH1G200US120
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Package: 7PM-EA SMBH1G200US120 Substitution - IGBT ⓘ Cross-Reference Search
SMBH1G200US120 datasheet
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Specs: SM2G50US120, SM2G50US60, SM2G75US120, SM2G75US60, SMBH1G100US120, SMBH1G100US60, SMBH1G150US120, SMBH1G150US60, TGD30N40P, SMBH1G200US60, SMBH1G300US60, SMBH1G400US60, SMBH1G50US120, SMBH1G50US60, SMBH1G75US120, SMBH1G75US60, SMBL1G100US120
Keywords - SMBH1G200US120 transistor spec
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History: IGC114T170S8RM | SKM300GAL063D | IGC114T170S8RH | APT65GP60JDF2 | SMBH1G150US60 | SKM300GAR123D | MG50J6ES50
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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