SMBH1G200US120 Datasheet and Replacement
Type Designator: SMBH1G200US120
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 150 nS
Package: 7PM-EA
SMBH1G200US120 substitution
SMBH1G200US120 Datasheet (PDF)
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Datasheet: SM2G50US120 , SM2G50US60 , SM2G75US120 , SM2G75US60 , SMBH1G100US120 , SMBH1G100US60 , SMBH1G150US120 , SMBH1G150US60 , FGH30S130P , SMBH1G200US60 , SMBH1G300US60 , SMBH1G400US60 , SMBH1G50US120 , SMBH1G50US60 , SMBH1G75US120 , SMBH1G75US60 , SMBL1G100US120 .
History: IXGT20N120
Keywords - SMBH1G200US120 transistor datasheet
SMBH1G200US120 cross reference
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SMBH1G200US120 replacement
History: IXGT20N120
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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