SMBH1G200US120 Datasheet and Replacement
Type Designator: SMBH1G200US120
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic|ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Package: 7PM-EA
- IGBT Cross-Reference
SMBH1G200US120 Datasheet (PDF)
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Datasheet: SM2G50US120 , SM2G50US60 , SM2G75US120 , SM2G75US60 , SMBH1G100US120 , SMBH1G100US60 , SMBH1G150US120 , SMBH1G150US60 , MBQ40T65FDSC , SMBH1G200US60 , SMBH1G300US60 , SMBH1G400US60 , SMBH1G50US120 , SMBH1G50US60 , SMBH1G75US120 , SMBH1G75US60 , SMBL1G100US120 .
History: 2MBI75N-120 | CM1400DU-24NF | JNG75T65HYU2 | TT050K065FQ | IXGH56N60B3D1 | IRG4BC40WL | CRG15T120BK3SD
Keywords - SMBH1G200US120 transistor datasheet
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History: 2MBI75N-120 | CM1400DU-24NF | JNG75T65HYU2 | TT050K065FQ | IXGH56N60B3D1 | IRG4BC40WL | CRG15T120BK3SD
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