SMBL1G100US60 Datasheet and Replacement
Type Designator: SMBL1G100US60
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 85 nS
Package: 7PM-AA
SMBL1G100US60 substitution
SMBL1G100US60 Datasheet (PDF)
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Datasheet: SMBH1G200US60 , SMBH1G300US60 , SMBH1G400US60 , SMBH1G50US120 , SMBH1G50US60 , SMBH1G75US120 , SMBH1G75US60 , SMBL1G100US120 , IRG4PC50W , SMBL1G150US120 , SMBL1G150US60 , SMBL1G200US120 , SMBL1G200US60 , SMBL1G300US60 , SMBL1G400US60 , SMBL1G50US120 , SMBL1G50US60 .
History: JT050N120F2MA1E | IXBH40N160
Keywords - SMBL1G100US60 transistor datasheet
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History: JT050N120F2MA1E | IXBH40N160
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