SMBL1G100US60 Specs and Replacement
Type Designator: SMBL1G100US60
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: 7PM-AA SMBL1G100US60 Substitution - IGBTⓘ Cross-Reference Search
SMBL1G100US60 datasheet
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Specs: SMBH1G200US60, SMBH1G300US60, SMBH1G400US60, SMBH1G50US120, SMBH1G50US60, SMBH1G75US120, SMBH1G75US60, SMBL1G100US120, TGAN40N60FD, SMBL1G150US120, SMBL1G150US60, SMBL1G200US120, SMBL1G200US60, SMBL1G300US60, SMBL1G400US60, SMBL1G50US120, SMBL1G50US60
Keywords - SMBL1G100US60 transistor spec
SMBL1G100US60 cross reference
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History: SMBL1G200US120 | SMBL1G200US60
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