SMBL1G150US60 Datasheet and Replacement
Type Designator: SMBL1G150US60
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 90 nS
Package: 7PM-BB
- IGBT Cross-Reference
SMBL1G150US60 Datasheet (PDF)
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Datasheet: SMBH1G400US60 , SMBH1G50US120 , SMBH1G50US60 , SMBH1G75US120 , SMBH1G75US60 , SMBL1G100US120 , SMBL1G100US60 , SMBL1G150US120 , IHW20N120R2 , SMBL1G200US120 , SMBL1G200US60 , SMBL1G300US60 , SMBL1G400US60 , SMBL1G50US120 , SMBL1G50US60 , SMBL1G75US120 , SMBL1G75US60 .
History: APT33GF120LRD | IXGT40N60C2D1 | 1MB08D-120 | IXGH64N60A3 | STGE200NB60S | STGW80V60DF | DM2G75SH6A
Keywords - SMBL1G150US60 transistor datasheet
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History: APT33GF120LRD | IXGT40N60C2D1 | 1MB08D-120 | IXGH64N60A3 | STGE200NB60S | STGW80V60DF | DM2G75SH6A



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