SMBL1G200US120 Datasheet and Replacement
Type Designator: SMBL1G200US120
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic|ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Package: 7PM-EA
- IGBT Cross-Reference
SMBL1G200US120 Datasheet (PDF)
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Datasheet: SMBH1G50US120 , SMBH1G50US60 , SMBH1G75US120 , SMBH1G75US60 , SMBL1G100US120 , SMBL1G100US60 , SMBL1G150US120 , SMBL1G150US60 , RJH60F7BDPQ-A0 , SMBL1G200US60 , SMBL1G300US60 , SMBL1G400US60 , SMBL1G50US120 , SMBL1G50US60 , SMBL1G75US120 , SMBL1G75US60 , SMC7G10US120 .
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
Keywords - SMBL1G200US120 transistor datasheet
SMBL1G200US120 cross reference
SMBL1G200US120 equivalent finder
SMBL1G200US120 lookup
SMBL1G200US120 substitution
SMBL1G200US120 replacement
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL



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