All IGBT. SME6G10US120 Datasheet

 

SME6G10US120 Datasheet and Replacement


   Type Designator: SME6G10US120
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Ic|ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 150 nS
   Package: 17PM-BA
      - IGBT Cross-Reference

 

SME6G10US120 Datasheet (PDF)

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Datasheet: SMC7G15US120 , SMC7G15US60 , SMC7G20US120 , SMC7G20US60 , SMC7G25US120 , SMC7G30US60 , SMC7G50US60 , SMC7G5US120 , SGT40N60NPFDPN , SME6G10US60 , SME6G15US120 , SME6G15US60 , SME6G20US120 , SME6G20US60 , SME6G25US120 , SME6G30US60 , SME6G50US60 .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - SME6G10US120 transistor datasheet

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