SME6G10US60 Datasheet and Replacement
Type Designator: SME6G10US60
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic|ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 110 nS
Package: 17PM-BA
- IGBT Cross-Reference
SME6G10US60 Datasheet (PDF)
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Datasheet: SMC7G15US60 , SMC7G20US120 , SMC7G20US60 , SMC7G25US120 , SMC7G30US60 , SMC7G50US60 , SMC7G5US120 , SME6G10US120 , FGH60N60SMD , SME6G15US120 , SME6G15US60 , SME6G20US120 , SME6G20US60 , SME6G25US120 , SME6G30US60 , SME6G50US60 , SME6G5US120 .
History: 7MBR100U2B060 | MITB10WB1200TMH | DIM800NSM33-F | SKM75GD123D | STGBL6NC60DI | MMIX4B22N300 | 7MBP100VDA060-50
Keywords - SME6G10US60 transistor datasheet
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History: 7MBR100U2B060 | MITB10WB1200TMH | DIM800NSM33-F | SKM75GD123D | STGBL6NC60DI | MMIX4B22N300 | 7MBP100VDA060-50
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