SME6G20US60 Datasheet and Replacement
Type Designator: SME6G20US60
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 84 nS
Package: 17PM-CA
- IGBT Cross-Reference
SME6G20US60 Datasheet (PDF)
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Datasheet: SMC7G30US60 , SMC7G50US60 , SMC7G5US120 , SME6G10US120 , SME6G10US60 , SME6G15US120 , SME6G15US60 , SME6G20US120 , RJP30H1DPD , SME6G25US120 , SME6G30US60 , SME6G50US60 , SME6G5US120 , SNG201017 , SNG201025 , SNG20620A , SNG301010 .
History: IXGR50N160H1 | HGT1S7N60B3S
Keywords - SME6G20US60 transistor datasheet
SME6G20US60 cross reference
SME6G20US60 equivalent finder
SME6G20US60 lookup
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History: IXGR50N160H1 | HGT1S7N60B3S
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