SME6G25US120 Datasheet and Replacement
Type Designator: SME6G25US120
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Package: 17PM-CA
- IGBT Cross-Reference
SME6G25US120 Datasheet (PDF)
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Datasheet: SMC7G50US60 , SMC7G5US120 , SME6G10US120 , SME6G10US60 , SME6G15US120 , SME6G15US60 , SME6G20US120 , SME6G20US60 , BT40T60ANF , SME6G30US60 , SME6G50US60 , SME6G5US120 , SNG201017 , SNG201025 , SNG20620A , SNG301010 , SNG30610 .
History: DIM400DDM12-A | 2MBI300UE-120
Keywords - SME6G25US120 transistor datasheet
SME6G25US120 cross reference
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History: DIM400DDM12-A | 2MBI300UE-120
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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