SME6G50US60 Specs and Replacement
Type Designator: SME6G50US60
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: 17PM-CA SME6G50US60 Substitution - IGBT ⓘ Cross-Reference Search
SME6G50US60 datasheet
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Specs: SME6G10US120, SME6G10US60, SME6G15US120, SME6G15US60, SME6G20US120, SME6G20US60, SME6G25US120, SME6G30US60, RJP30H1DPD, SME6G5US120, SNG201017, SNG201025, SNG20620A, SNG301010, SNG30610, SNG30610A, SNG401225
Keywords - SME6G50US60 transistor spec
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History: SGS6N60UF | AIKB20N60CT | SGS23N60UFD
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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