SNG201017 Spec and Replacement
Type Designator: SNG201017
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Ic| ⓘ - Maximum Collector Current: 17 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 500 nS
Package: TO254
SNG201017 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SNG201017 specs
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Specs: SME6G15US120 , SME6G15US60 , SME6G20US120 , SME6G20US60 , SME6G25US120 , SME6G30US60 , SME6G50US60 , SME6G5US120 , FGA60N65SMD , SNG201025 , SNG20620A , SNG301010 , SNG30610 , SNG30610A , SNG401225 , SNG40660 , STGB10N60L .
History: STGB10NB37LZ
Keywords - SNG201017 transistor spec
SNG201017 cross reference
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History: STGB10NB37LZ
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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