SNG201025 Specs and Replacement
Type Designator: SNG201025
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃
Package: TO254
SNG201025 Substitution - IGBT ⓘ Cross-Reference Search
SNG201025 datasheet
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Specs: SME6G15US60 , SME6G20US120 , SME6G20US60 , SME6G25US120 , SME6G30US60 , SME6G50US60 , SME6G5US120 , SNG201017 , SGT50T65FD1PN , SNG20620A , SNG301010 , SNG30610 , SNG30610A , SNG401225 , SNG40660 , STGB10N60L , STGB10NB37LZ .
Keywords - SNG201025 transistor spec
SNG201025 cross reference
SNG201025 equivalent finder
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