SNG40660 Specs and Replacement
Type Designator: SNG40660
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Package: TO258
SNG40660 Substitution - IGBT ⓘ Cross-Reference Search
SNG40660 datasheet
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Specs: SME6G5US120 , SNG201017 , SNG201025 , SNG20620A , SNG301010 , SNG30610 , SNG30610A , SNG401225 , IKW75N60T , STGB10N60L , STGB10NB37LZ , STGB20NB32LZ , STGB20NB37LZ , STGB30NB60H , STGB3NB60HD , STGB7NB60HD , STGD3NB60S .
Keywords - SNG40660 transistor spec
SNG40660 cross reference
SNG40660 equivalent finder
SNG40660 lookup
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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