SNG40660 Datasheet and Replacement
Type Designator: SNG40660
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 700 nS
Package: TO258
- IGBT Cross-Reference
SNG40660 Datasheet (PDF)
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Datasheet: SME6G5US120 , SNG201017 , SNG201025 , SNG20620A , SNG301010 , SNG30610 , SNG30610A , SNG401225 , RJH30E2DPP , STGB10N60L , STGB10NB37LZ , STGB20NB32LZ , STGB20NB37LZ , STGB30NB60H , STGB3NB60HD , STGB7NB60HD , STGD3NB60S .
History: GT30G125
Keywords - SNG40660 transistor datasheet
SNG40660 cross reference
SNG40660 equivalent finder
SNG40660 lookup
SNG40660 substitution
SNG40660 replacement
History: GT30G125
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