STGP10N60L IGBT. Datasheet pdf. Equivalent
Type Designator: STGP10N60L
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V
|Ic|ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 700 nS
Coesⓘ - Output Capacitance, typ: 1800pF pF
Package: TO220
STGP10N60L Transistor Equivalent Substitute - IGBT Cross-Reference Search
STGP10N60L Datasheet (PDF)
stgp10nb60s.pdf
STGP10NB60SN-CHANNEL 10A - 600V TO-220PowerMESH IGBTTYPE VCES VCE(sat) ICSTGP10NB60S 600 V
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf
STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM
stgp10nc60h.pdf
STGP10NC60HN-channel 10A - 600V - TO-220Very fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType(Max)@ 25C @100CSTGP10NC60H 600V
stgp10nc60hd.pdf
STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant
stgb10nc60k stgp10nc60k stgd10nc60k.pdf
STGB10NC60K - STGD10NC60KSTGP10NC60KN-channel 600V - 10A - D2PAK / TO-220 / DPAKShort circuit rated PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGB10NC60K 600V
stgp10nc60s.pdf
STGD10NC60SSTGP10NC60S10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switchingTAB Low on-voltage drop (VCE(sat))TABApplication3321 1 Motor driveDPAK TO-220DescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low
stgb10nc60kdt4 stgd10nc60kdt4 stgf10nc60kd stgp10nc60kd.pdf
STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IESsusceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor
stgd10nc60s stgp10nc60s.pdf
STGD10NC60SSTGP10NC60S10 A - 600 V fast IGBTFeatures Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies33211ApplicationDPAK TO-220 Medium frequency motor controlDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of
stgp10nb60sfp.pdf
STGP10NB60SFPN-CHANNEL 10A - 600V - TO-220FPPowerMesh IGBTTYPE VCES VCE(sat) ICSTGP10NB60SFP 600
stgf10nb60sd stgp10nb60sd.pdf
STGF10NB60SDSTGP10NB60SD16 A, 600 V, low drop IGBT with soft and fast recovery diodeFeatures Low on-voltage drop (VCE(sat)) High current capability TAB Very soft ultra fast recovery antiparallel diodeApplications3 32211 Light dimmer Static relaysTO-220FPTO-220 Motor driveDescriptionThis IGBT utilizes the advanced Power MESH Figure 1.
stgp10nb60sd.pdf
STGF10NB60SDSTGP10NB60SD16 A, 600 V, low drop IGBT with soft and fast recovery diodeFeatures Low on-voltage drop (VCE(sat)) High current capability TAB Very soft ultra fast recovery antiparallel diodeApplications3 32211 Light dimmer Static relaysTO-220FPTO-220 Motor driveDescriptionThis IGBT utilizes the advanced Power MESH Figure 1.
stgb10nb37lz stgp10nb37lz.pdf
STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off
stgp10nb60s stgp10nb60sfp stgb10nb60s.pdf
STGP10NB60SSTGP10NB60SFP- STGB10NB60SN-CHANNEL 10A - 600V - TO-220/TO-220FP/DPAKPowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGP10NB60S 600 V
stgp10nc60kd.pdf
STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM
stgp10nb37lz.pdf
STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off
stgb10nc60hd stgd10nc60hd stgf10nc60hd stgp10nc60hd.pdf
STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant
Datasheet: STGB10NB37LZ , STGB20NB32LZ , STGB20NB37LZ , STGB30NB60H , STGB3NB60HD , STGB7NB60HD , STGD3NB60S , STGD7NB60H , TGAN60N60F2DS , STGP7NB60HD , STGP7NB60HDFP , STGW12NB60H , STGW20NB60H , STGW20NB60HD , STGW30NB60HD , STGW50NB60H , STGY50NB60HD .
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