STGP10N60L
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: STGP10N60L
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 125
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 600
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 15
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
10
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.95
V @25℃
Tjⓘ - Максимальная температура перехода:
150
℃
trⓘ -
Время нарастания типовое: 700
nS
Coesⓘ - Выходная емкость, типовая: 1800pF
pF
Тип корпуса:
TO220
Аналог (замена) для STGP10N60L
STGP10N60L
Datasheet (PDF)
7.1. Size:288K st
stgp10nb60s.pdf STGP10NB60SN-CHANNEL 10A - 600V TO-220PowerMESH IGBTTYPE VCES VCE(sat) ICSTGP10NB60S 600 V
7.2. Size:607K st
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM
7.3. Size:326K st
stgp10nc60h.pdf STGP10NC60HN-channel 10A - 600V - TO-220Very fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType(Max)@ 25C @100CSTGP10NC60H 600V
7.4. Size:767K st
stgp10nc60hd.pdf STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant
7.5. Size:608K st
stgb10nc60k stgp10nc60k stgd10nc60k.pdf STGB10NC60K - STGD10NC60KSTGP10NC60KN-channel 600V - 10A - D2PAK / TO-220 / DPAKShort circuit rated PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGB10NC60K 600V
7.6. Size:1260K st
stgp10nc60s.pdf STGD10NC60SSTGP10NC60S10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switchingTAB Low on-voltage drop (VCE(sat))TABApplication3321 1 Motor driveDPAK TO-220DescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low
7.7. Size:1653K st
stgb10nc60kdt4 stgd10nc60kdt4 stgf10nc60kd stgp10nc60kd.pdf STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IESsusceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor
7.8. Size:252K st
stgd10nc60s stgp10nc60s.pdf STGD10NC60SSTGP10NC60S10 A - 600 V fast IGBTFeatures Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies33211ApplicationDPAK TO-220 Medium frequency motor controlDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of
7.9. Size:316K st
stgp10nb60sfp.pdf STGP10NB60SFPN-CHANNEL 10A - 600V - TO-220FPPowerMesh IGBTTYPE VCES VCE(sat) ICSTGP10NB60SFP 600
7.10. Size:426K st
stgf10nb60sd stgp10nb60sd.pdf STGF10NB60SDSTGP10NB60SD16 A, 600 V, low drop IGBT with soft and fast recovery diodeFeatures Low on-voltage drop (VCE(sat)) High current capability TAB Very soft ultra fast recovery antiparallel diodeApplications3 32211 Light dimmer Static relaysTO-220FPTO-220 Motor driveDescriptionThis IGBT utilizes the advanced Power MESH Figure 1.
7.11. Size:427K st
stgp10nb60sd.pdf STGF10NB60SDSTGP10NB60SD16 A, 600 V, low drop IGBT with soft and fast recovery diodeFeatures Low on-voltage drop (VCE(sat)) High current capability TAB Very soft ultra fast recovery antiparallel diodeApplications3 32211 Light dimmer Static relaysTO-220FPTO-220 Motor driveDescriptionThis IGBT utilizes the advanced Power MESH Figure 1.
7.12. Size:747K st
stgb10nb37lz stgp10nb37lz.pdf STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off
7.13. Size:433K st
stgp10nb60s stgp10nb60sfp stgb10nb60s.pdf STGP10NB60SSTGP10NB60SFP- STGB10NB60SN-CHANNEL 10A - 600V - TO-220/TO-220FP/DPAKPowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGP10NB60S 600 V
7.14. Size:605K st
stgp10nc60kd.pdf STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM
7.15. Size:747K st
stgp10nb37lz.pdf STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off
7.16. Size:768K st
stgb10nc60hd stgd10nc60hd stgf10nc60hd stgp10nc60hd.pdf STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant
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