STGY50NB60HD Datasheet and Replacement
Type Designator: STGY50NB60HD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 4500pF pF
Qgⓘ - Total Gate Charge, typ: 260 nC
Package: TMAX
- IGBT Cross-Reference
STGY50NB60HD Datasheet (PDF)
stgy50nb60hd.pdf

STGY50NB60HDN-CHANNEL 50A - 600V - Max247PowerMESH IGBTTYPE VCES VCE(sat) ICSTGY50NB60HD 600 V
stgy50nc60wd.pdf

STGY50NC60WD50 A, 600 V, ultra fast IGBTFeatures Very high frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode3Applications21 Very high frequency inverters, UPSMax247 HF, SMPS and PFC in both hard switch and resonant topologies Motor drivers WeldingFigure 1. Interna
Datasheet: STGP10N60L , STGP7NB60HD , STGP7NB60HDFP , STGW12NB60H , STGW20NB60H , STGW20NB60HD , STGW30NB60HD , STGW50NB60H , GT30F133 , TA49014 , TA49015 , TA49016 , TA49017 , TA49021 , TA49047 , TA49048 , TA49049 .
History: APT64GA90S
Keywords - STGY50NB60HD transistor datasheet
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History: APT64GA90S



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