FGA25N120ANTD Spec and Replacement, IGBT Equivalent Finder, Cross Reference

FGA25N120ANTD Specs and Replacement

The FGA25N120ANTD is a high-performance Insulated Gate Bipolar Transistor designed for efficient power switching in industrial and automotive applications. It features a voltage rating of 1200V and a current rating of 50A at 25C, combining the high-input impedance of a MOSFET with the low conduction loss of a bipolar transistor. This IGBT supports fast switching speeds, minimizing energy loss in high-frequency operations. Its rugged design ensures reliable performance under harsh thermal and electrical conditions. Key applications include inverters, motor drives, UPS systems, renewable energy converters. With integrated protection against short circuits and thermal overload, the FGA25N120ANTD offers durability, efficiency, precise control in modern power electronics.

   Type Designator: FGA25N120ANTD
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 312 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   tr ⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Package: TO3P

FGA25N120ANTD Substitution

- IGBT ⓘ Cross-Reference Search

FGA25N120ANTD datasheet

0.1. Size:653K fairchild semi
fga25n120antdtu f109.pdf pdf_icon

u July, 2007 FGA25N120ANTD/FGA25N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage VCE(sat), typ = 2.0V and switching performances, high avalanche ruggedness and @ IC ... See More ⇒

0.2. Size:1382K onsemi
fga25n120antdtu.pdf pdf_icon

FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features Description NPT Trench Technology, Positive Temperature Coefficient Using ON Semiconductor's proprietary trench design and Low Saturation Voltage VCE(sat), typ = 2.0 V advanced NPT technology, the 1200V NPT IGBT offers @ IC = 25 A and TC = 25 C superior conduction and switching performances, high avalanche ruggedness an... See More ⇒

5.1. Size:687K fairchild semi
fga25n120ftd.pdf pdf_icon

February 2009 FGA25N120FTD tm 1200V, 25A Trench IGBT Features Field stop trench technology General Description High speed switching Using advanced field stop trench technology, Fairchild s 1200V Low saturation voltage VCE(sat) =1.6V @ IC = 25A trench IGBTs offer superior conduction and switching perfor- High input impedance mances, and easy parallel operation wit... See More ⇒

Specs: TA49123 , TA49182 , TA9895 , FGA15N120ANTDTU-F109 , FGA15N120FTD , FGA180N33ATD , FGA20N120FTD , FGA20S120M , FGH30S130P , FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD , FGA30N60LSD , FGA50N100BNT , FGA50N100BNTD , FGA50N100BNTD2 , FGA60N60UFD .