All IGBT. FGA25N120FTD Datasheet

 

FGA25N120FTD IGBT. Datasheet pdf. Equivalent


   Type Designator: FGA25N120FTD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 313 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 96 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Qgⓘ - Total Gate Charge, typ: 160 nC
   Package: TO3P

 FGA25N120FTD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGA25N120FTD Datasheet (PDF)

 ..1. Size:687K  fairchild semi
 fga25n120ftd.pdf

FGA25N120FTD FGA25N120FTD

February 2009FGA25N120FTDtm1200V, 25A Trench IGBTFeatures Field stop trench technologyGeneral Description High speed switchingUsing advanced field stop trench technology, Fairchilds 1200V Low saturation voltage: VCE(sat) =1.6V @ IC = 25Atrench IGBTs offer superior conduction and switching perfor- High input impedancemances, and easy parallel operation wit

 5.1. Size:653K  fairchild semi
 fga25n120antdtu f109.pdf

FGA25N120FTD FGA25N120FTD

uJuly, 2007FGA25N120ANTD/FGA25N120ANTD_F109tm1200V NPT Trench IGBTFeatures Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage: VCE(sat), typ = 2.0V and switching performances, high avalanche ruggedness and @ IC

 5.2. Size:1382K  onsemi
 fga25n120antdtu.pdf

FGA25N120FTD FGA25N120FTD

FGA25N120ANTDTU1200 V, 25 A NPT Trench IGBTFeatures Description NPT Trench Technology, Positive Temperature CoefficientUsing ON Semiconductor's proprietary trench design and Low Saturation Voltage: VCE(sat), typ = 2.0 V advanced NPT technology, the 1200V NPT IGBT offers @ IC = 25 A and TC = 25C superior conduction and switching performances, high avalanche ruggedness an

 9.1. Size:627K  onsemi
 fga25s125p.pdf

FGA25N120FTD FGA25N120FTD

FGA25S125P1250 V, 25 A Shorted-anode IGBTFeatures General Description High Speed SwitchingUsing advanced field stop trench and shorted-anode technol- Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 Aogy, ON Semiconductor's shorted-anode trench IGBTs offer High Input Impedancesuperior con-duction and switching performances forsoft switching applications. The devi

Datasheet: TA9895 , FGA15N120ANTDTU-F109 , FGA15N120FTD , FGA180N33ATD , FGA20N120FTD , FGA20S120M , FGA25N120ANTD , FGA25N120ANTDTU-F109 , MBQ40T65FDSC , FGA30N120FTD , FGA30N60LSD , FGA50N100BNT , FGA50N100BNTD , FGA50N100BNTD2 , FGA60N60UFD , FGA90N33ATD , FGAF40N60UF .

 

 
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