All IGBT. FGH30N120FTD Datasheet

 

FGH30N120FTD IGBT. Datasheet pdf. Equivalent

Type Designator: FGH30N120FTD

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.6

Maximum Collector Current |Ic|, A: 30

Package: TO247

FGH30N120FTD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH30N120FTD Datasheet (PDF)

0.1. fgh30n120ftd.pdf Size:582K _fairchild_semi

FGH30N120FTD
FGH30N120FTD

November 2008FGH30N120FTDtm1200V, 30A Trench IGBTFeatures General Description Field stop trench technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High speed switchingmances, and easy parallel operation with exceptional avalanche Low saturation voltage: VCE(sat) = 1.6V @ IC = 30Arug

8.1. fgh30n60lsd.pdf Size:717K _fairchild_semi

FGH30N120FTD
FGH30N120FTD

July 2008FGH30N60LSDtmFeatures General Description Low saturation voltage: VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolar High Input Impedancetransistors.This device has the high input impedance of a Low Conduction LossMOSFET and the low on-state conduction loss of a bipolartra

 9.1. fgh30s130p.pdf Size:667K _fairchild_semi

FGH30N120FTD
FGH30N120FTD

October 2012FGH30S130PTMShorted Anode IGBTFeatures General Description High speed switching Using advanced Field Stop Trench and Shorted Anode technol-ogy, Fairchilds Shorted AnodeTM Trench IGBTs offer superior Low saturation voltage: VCE(sat) =1.75V @ IC = 30Aconduction and switching performances, and easy parallel oper- High input impedanceation with exceptiona

Datasheet: FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , GT60M102 , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD .

 

 
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