FGH30N120FTD PDF and Equivalents Search

 

FGH30N120FTD PDF Specs and Replacement


   Type Designator: FGH30N120FTD
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 339 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   tr ⓘ - Rise Time, typ: 101 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Package: TO247
 

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FGH30N120FTD PDF specs

 ..1. Size:582K  fairchild semi
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FGH30N120FTD

November 2008 FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description Field stop trench technology Using advanced field stop trench technology, Fairchild s 1200V trench IGBTs offer superior conduction and switching perfor- High speed switching mances, and easy parallel operation with exceptional avalanche Low saturation voltage VCE(sat) = 1.6V @ IC = 30A rug... See More ⇒

 8.1. Size:717K  fairchild semi
fgh30n60lsd.pdf pdf_icon

FGH30N120FTD

July 2008 FGH30N60LSD tm Features General Description Low saturation voltage VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar High Input Impedance transistors.This device has the high input impedance of a Low Conduction Loss MOSFET and the low on-state conduction loss of a bipolar tra... See More ⇒

 8.2. Size:388K  onsemi
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FGH30N120FTD

IGBT - PT 600 V, 30 A FGH30N60LSD Description Using ON Semiconductor s advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, www.onsemi.com which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low C conduction losses are the most important factor. Features Low Saturation Voltage VC... See More ⇒

 9.1. Size:667K  fairchild semi
fgh30s130p.pdf pdf_icon

FGH30N120FTD

October 2012 FGH30S130P TM Shorted Anode IGBT Features General Description High speed switching Using advanced Field Stop Trench and Shorted Anode technol- ogy, Fairchild s Shorted AnodeTM Trench IGBTs offer superior Low saturation voltage VCE(sat) =1.75V @ IC = 30A conduction and switching performances, and easy parallel oper- High input impedance ation with exceptiona... See More ⇒

Specs: FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGW75N60HD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD .

History: FGH20N60UFD

Keywords - FGH30N120FTD transistor spec

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