All IGBT. FGH30N120FTD Datasheet

 

FGH30N120FTD IGBT. Datasheet pdf. Equivalent


   Type Designator: FGH30N120FTD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 339 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 101 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Qgⓘ - Total Gate Charge, typ: 208 nC
   Package: TO247

 FGH30N120FTD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH30N120FTD Datasheet (PDF)

 ..1. Size:582K  fairchild semi
fgh30n120ftd.pdf

FGH30N120FTD FGH30N120FTD

November 2008FGH30N120FTDtm1200V, 30A Trench IGBTFeatures General Description Field stop trench technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High speed switchingmances, and easy parallel operation with exceptional avalanche Low saturation voltage: VCE(sat) = 1.6V @ IC = 30Arug

 8.1. Size:717K  fairchild semi
fgh30n60lsd.pdf

FGH30N120FTD FGH30N120FTD

July 2008FGH30N60LSDtmFeatures General Description Low saturation voltage: VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolar High Input Impedancetransistors.This device has the high input impedance of a Low Conduction LossMOSFET and the low on-state conduction loss of a bipolartra

 8.2. Size:388K  onsemi
fgh30n60lsd.pdf

FGH30N120FTD FGH30N120FTD

IGBT - PT600 V, 30 AFGH30N60LSDDescriptionUsing ON Semiconductor s advanced PT technology,the FGA30N60LSD IGBT offers superior conduction performances,www.onsemi.comwhich offer the optimum performance for medium switchingapplication such as solar inverter, UPS applications where lowCconduction losses are the most important factor.Features Low Saturation Voltage: VC

 9.1. Size:667K  fairchild semi
fgh30s130p.pdf

FGH30N120FTD FGH30N120FTD

October 2012FGH30S130PTMShorted Anode IGBTFeatures General Description High speed switching Using advanced Field Stop Trench and Shorted Anode technol-ogy, Fairchilds Shorted AnodeTM Trench IGBTs offer superior Low saturation voltage: VCE(sat) =1.75V @ IC = 30Aconduction and switching performances, and easy parallel oper- High input impedanceation with exceptiona

 9.2. Size:422K  onsemi
fgh30s150p.pdf

FGH30N120FTD FGH30N120FTD

IGBT - Shorted-anode1500 V, 30 AFGH30S150PDescriptionUsing advanced field stop trench and shorted-anode technology,ON Semiconductors shorted-anode trench IGBTs offer superiorwww.onsemi.comconduction and switching performances for soft switchingapplications. The device can operate in parallel configuration withCexceptional avalanche capability. This device is designed for

 9.3. Size:538K  onsemi
fgh30s130p.pdf

FGH30N120FTD FGH30N120FTD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGPF4533 , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD .

 

 
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