FGH30N120FTD - аналоги и описание IGBT

 

FGH30N120FTD - аналоги, основные параметры, даташиты

Наименование: FGH30N120FTD

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 339 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃

tr ⓘ - Время нарастания типовое: 101 nS

Coesⓘ - Выходная емкость, типовая: 150 pF

Тип корпуса: TO247

 Аналог (замена) для FGH30N120FTD

- подбор ⓘ IGBT транзистора по параметрам

 

FGH30N120FTD даташит

 ..1. Size:582K  fairchild semi
fgh30n120ftd.pdfpdf_icon

FGH30N120FTD

November 2008 FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description Field stop trench technology Using advanced field stop trench technology, Fairchild s 1200V trench IGBTs offer superior conduction and switching perfor- High speed switching mances, and easy parallel operation with exceptional avalanche Low saturation voltage VCE(sat) = 1.6V @ IC = 30A rug

 8.1. Size:717K  fairchild semi
fgh30n60lsd.pdfpdf_icon

FGH30N120FTD

July 2008 FGH30N60LSD tm Features General Description Low saturation voltage VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar High Input Impedance transistors.This device has the high input impedance of a Low Conduction Loss MOSFET and the low on-state conduction loss of a bipolar tra

 8.2. Size:388K  onsemi
fgh30n60lsd.pdfpdf_icon

FGH30N120FTD

IGBT - PT 600 V, 30 A FGH30N60LSD Description Using ON Semiconductor s advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, www.onsemi.com which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low C conduction losses are the most important factor. Features Low Saturation Voltage VC

 9.1. Size:667K  fairchild semi
fgh30s130p.pdfpdf_icon

FGH30N120FTD

October 2012 FGH30S130P TM Shorted Anode IGBT Features General Description High speed switching Using advanced Field Stop Trench and Shorted Anode technol- ogy, Fairchild s Shorted AnodeTM Trench IGBTs offer superior Low saturation voltage VCE(sat) =1.75V @ IC = 30A conduction and switching performances, and easy parallel oper- High input impedance ation with exceptiona

Другие IGBT... FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGW75N60HD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD .

 

 

 


 
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