FGH30N120FTD - аналоги, основные параметры, даташиты
Наименование: FGH30N120FTD
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 339 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
tr ⓘ - Время нарастания типовое: 101 nS
Coesⓘ - Выходная емкость, типовая: 150 pF
Тип корпуса: TO247
Аналог (замена) для FGH30N120FTD
- подбор ⓘ IGBT транзистора по параметрам
FGH30N120FTD даташит
fgh30n120ftd.pdf
November 2008 FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description Field stop trench technology Using advanced field stop trench technology, Fairchild s 1200V trench IGBTs offer superior conduction and switching perfor- High speed switching mances, and easy parallel operation with exceptional avalanche Low saturation voltage VCE(sat) = 1.6V @ IC = 30A rug
fgh30n60lsd.pdf
July 2008 FGH30N60LSD tm Features General Description Low saturation voltage VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar High Input Impedance transistors.This device has the high input impedance of a Low Conduction Loss MOSFET and the low on-state conduction loss of a bipolar tra
fgh30n60lsd.pdf
IGBT - PT 600 V, 30 A FGH30N60LSD Description Using ON Semiconductor s advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, www.onsemi.com which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low C conduction losses are the most important factor. Features Low Saturation Voltage VC
fgh30s130p.pdf
October 2012 FGH30S130P TM Shorted Anode IGBT Features General Description High speed switching Using advanced Field Stop Trench and Shorted Anode technol- ogy, Fairchild s Shorted AnodeTM Trench IGBTs offer superior Low saturation voltage VCE(sat) =1.75V @ IC = 30A conduction and switching performances, and easy parallel oper- High input impedance ation with exceptiona
Другие IGBT... FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGW75N60HD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD .
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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