All IGBT. FGH60N60SFD Datasheet

 

FGH60N60SFD IGBT. Datasheet pdf. Equivalent

Type Designator: FGH60N60SFD

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 378

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 120

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.3

Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 42

Collector Capacity (Cc), typ, pF: 350

Total Gate Charge (Qg), typ, nC: 198

Package: TO247

FGH60N60SFD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH60N60SFD Datasheet (PDF)

 ..1. Size:756K  fairchild semi
fgh60n60sfd.pdf

FGH60N60SFD FGH60N60SFD

April 2009FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and swi

 ..2. Size:768K  onsemi
fgh60n60sfd.pdf

FGH60N60SFD FGH60N60SFD

August 2008FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and sw

 0.1. Size:476K  onsemi
fgh60n60sfdtu-f085.pdf

FGH60N60SFD FGH60N60SFD

IGBT - Field Stop600 V, 60 AFGH60N60SFDTU-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorsnew series of Field Stop IGBTs offer the optimum performance forwww.onsemi.comAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.CFeatures High Current Capability Low Saturation Voltage: VCE(s

 4.1. Size:647K  fairchild semi
fgh60n60sf.pdf

FGH60N60SFD FGH60N60SFD

July 2008FGH60N60SFtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and switc

 4.2. Size:396K  onsemi
fgh60n60sf.pdf

FGH60N60SFD FGH60N60SFD

IGBT - Field Stop600 V, 60 AFGH60N60SFDescriptionUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for solar inverter, UPS,www.onsemi.comwelder and PFC applications where low conduction and switchinglosses are essential.VCES ICFeatures600 V 60 A High Current CapabilityC Low Saturation Voltage: VCE(sat) =

Datasheet: FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF , GT30F124 , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD .

 

 
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