FGH60N60SFD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGH60N60SFD  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 378 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃

trⓘ - Tiempo de subida, typ: 42 nS

Coesⓘ - Capacitancia de salida, typ: 350 pF

Encapsulados: TO247

  📄📄 Copiar 

 Búsqueda de reemplazo de FGH60N60SFD IGBT

- Selecciónⓘ de transistores por parámetros

 

FGH60N60SFD datasheet

 ..1. Size:756K  fairchild semi
fgh60n60sfd.pdf pdf_icon

FGH60N60SFD

April 2009 FGH60N60SFD tm 600V, 60A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage VCE(sat) =2.3V @ IC = 60A Heating, UPS, SMPS and PFC applications where low conduc- High input impedance tion and swi

 ..2. Size:768K  onsemi
fgh60n60sfd.pdf pdf_icon

FGH60N60SFD

August 2008 FGH60N60SFD tm 600V, 60A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage VCE(sat) =2.3V @ IC = 60A Heating, UPS, SMPS and PFC applications where low conduc- High input impedance tion and sw

 0.1. Size:476K  onsemi
fgh60n60sfdtu-f085.pdf pdf_icon

FGH60N60SFD

IGBT - Field Stop 600 V, 60 A FGH60N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor s new series of Field Stop IGBTs offer the optimum performance for www.onsemi.com Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. C Features High Current Capability Low Saturation Voltage VCE(s

 4.1. Size:647K  fairchild semi
fgh60n60sf.pdf pdf_icon

FGH60N60SFD

July 2008 FGH60N60SF tm 600V, 60A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage VCE(sat) =2.3V @ IC = 60A Heating, UPS, SMPS and PFC applications where low conduc- High input impedance tion and switc

Otros transistores... FGH40N60SFD, FGH40N60SMD, FGH40N60SMDF, FGH40N60UF, FGH40N60UFD, FGH40N65UFD, FGH50N3, FGH60N60SF, FGH40N60UFD, FGH60N60SMD, FGH60N60UFD, FGH75N60UF, FGH80N60FD, FGH80N60FD2, FGL35N120FTD, FGL60N100BNTD, FGP20N60UFD