FGP20N60UFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGP20N60UFD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 165 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 110 pF
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
FGP20N60UFD Datasheet (PDF)
fgp20n60ufd.pdf

October 2008FGP20N60UFDtm600V, 20A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =1.8V @ IC = 20AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and s
fgp20n60ufd.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , SGT50T65FD1PT , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD .
History: HGTG30N60A4D | TGH30N120FD | IXYP8N90C3D1 | GPU150HF120D2 | IRG4PH30K | HGTG30N60C3D | IXBH9N160
History: HGTG30N60A4D | TGH30N120FD | IXYP8N90C3D1 | GPU150HF120D2 | IRG4PH30K | HGTG30N60C3D | IXBH9N160



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